This is an archive of requests from 2013 to 2021. New requests are not being added here.
| PROM Request Title | PROM Date | PROM Request Summary | Equipment List | PROM Decision |
|---|---|---|---|---|
| Lanthanum Hexaboride (LaB6) and Cerium Hexaboride (CeB6) Sputtering in Metalica | 06/02/2014 (all day) | Request for new sputtering targets (LaB6 and CeB6) for use in Metalica | Approved. | |
| Request for use of glass wafer cleaning detergent | 05/29/2014 (all day) | Request to use Alconex Detergent 8 and Borer Chemie AG Deconex NS-x to clean glass wafers for particle removal. | Approved. 1 gallon chemical needs to be poured into smaller amber bottle for storage in the lab. | |
| CLK-820 | 05/16/2014 (all day) | Request to use J.T. Baker CLK-820 photoresist stripper for Cu on an ongoing basis. | Wet Bench Flexcorr 1 (wbflexcorr-1) | Approved. |
| Resist in HF vapor etcher | 05/07/2014 (all day) | Request to use resist covered wafer in HF vapor etcher (currently not allowed). | Approved. Final call on processing to be determined by Gary Yama. | |
| Request for Zinc Phosphorus Dopant Coating | 04/10/2014 (all day) | Request to dispense and anneal Zinc Phosphorus spin on dopant in SNF. | Rejected. | |
| Etching Polyacrylonitrile-Lithium Perchlorate membrane with Au mask | 03/17/2014 (all day) | Request to use PAN-LiClO4 film in PT-OX. Concern is using Li compounds in the shared equipment. | Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox) | Approved for documented runs. Additional runs or larger substrates will require review by PROM committee. |
| Poly-Si Deposition on Mo/Si substrate in ThermcoPoly2 (LPCVD) | 03/07/2014 (all day) | Deposition of poly-Si on Mo/Si substrate in ThermocoPoly2 requires approval to demonstrate low vapor pressure of Mo at process conditions. | Approved. Any changes to documented request will require re-evaluation by committee. | |
| Li2CO3 ALD | 02/28/2014 (all day) | Request to perform ALD of Li2CO3 in Savannah. Request requires new precursors, equipment modification, and significant handling procedural changes to address safety issues. | Savannah ALD (savannah) | Conditional Approval. Process is approved as documented. Equipment modifications will need to be documented and reviewed by PROM Committee. |
| Encapsulated 1cm2 GaAs Substrate Annealing in RTA | 02/26/2014 (all day) | Encapsulated 1cm2 GaAs substrate annealing in RTA. GaAs substrates are not allowed in RTA without approval. | RTA AllWin 610 (aw610_r) | Approved. Any changes to documented request will require re-evaluation by committee. |
| Crystal Bond 509 in Xactix (XeFe2) Etcher | 02/21/2014 (all day) | Request to use Crystal Bond 509 in Xactix (XeFe2) Etcher. Crystal Bond 509 is approved for lab use but not standard for Xactix. | Xactix Xenon Difluoride Etcher (xactix) | Approved for use with gold contaminated chuck. |