Flexible

The "Flexible" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Flexible" category.

Equipment Tables

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Material Thickness Range	Materials Lab Supplied	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth		Flexible			C		800 °C - 1100 °C		78% N₂, 21% O₂, ~1% Ar CH₄ H₂	Pieces 2" 3" 4"	Silicon (Si) Other (ProMCom approval required) (Various)	1x4" wafer or Copper/Nickel foil
Aixtron MOCVD - III-V system aix200	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean	Flexible		0.00 - 5.00 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN		300 °C - 800 °C		H₂ MO sources N₂ SiH₄	Pieces 2" 4"	Silicon (Si) Quartz (SiO2) Sapphire (Al₂O₃) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible		0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Other (ProMCom approval required) (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible		0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Germanium (Ge) Other (ProMCom approval required) (Various)	4"x3 or 6"x1 wafers or pieces
Alveole Primo alveole	Patterning > Protein patterning		Flexible
Asher: PVA TePla Asher: PVA TePla	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Flexible	Resist				20 °C - °C		O₂	4" 6"	Silicon (Si) Glass (SiO₂) Other (ProMCom approval required) (Various)	25
Asylum AFM afm-asylum	Characterization > Surface Analysis > Profilometer > Atomic Force Microscopy (AFM)		Flexible								Pieces 2" 3"
Biologic SP-300 biologic	Characterization > Potentiostat Measurement		Flexible
CHA Solutions II Evaporator cha-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible		0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Germanium (Ge) Other (ProMCom approval required) (Various)	4"x15 or 6"x3 wafers or pieces
CMP GnP POLI-400L cmp	Machining > Wafer Polishing		Flexible
Critical Point Dryer Tousimis Automegasamdri-936 cpd	Drying > CO2 Drying Wet Chemical Processing		Flexible						CO₂		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
CytoViva HSI cytoviva	Characterization		Flexible
DISCO Backgrinder disco-backgrind	Machining		Flexible
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw		Flexible								Pieces 2" 3" 4" 6"	Silicon (Si) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN)	1x4", 1x6" or 1x8" wafer, or pieces
Epilog Fusion M2 Laser Cutter lasercutter	Machining > Laser Cutting		Flexible
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing		Flexible				AZ 1:1 MF-26A developer				Pieces 2" 3" 4" 6" 8" 12" Cones Disks Other
Ex Fab Solvent Wet Bench wbexfab_solv	Cleaning > Solvent Cleaning Patterning > Metal Lift-off Wet Chemical Processing		Flexible						Solvents		Pieces 2" 3" 4" 6" 8" Other
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible		1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia		24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible		1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania		24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) III-V (III-V)
Finetech Lambda flipchipbonder	Bonding		Flexible					°C - 400 °C			Pieces 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge)	1

Flexible

Equipment Tables

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