N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
CO2 drying after release of micromachined devices
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Direct Write
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Bakes wafers with resist after the development, called post-bake.
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -
Substrates in clean category: Pre-Diffusion Clean
For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
