Reactive ion etchers are parallel plate, capacitively coupled plasma etchers wherein the substrate sits on the powered electrode.  An RF power, in most cases at 13.56MHz, is applied to the powered electrode.  The powered electrode area is typically smaller than the grounded electrode area.  Gases that are fed into the chamber are ioized and produce a gaseous mixture of neutral and ionized species.  The positively charged species accelerate toward the biased electrode where the substrate is placed and causes the etching of the substrate.  It is also called ion assisted etching as neutrals also participate in the etching process.

Processing Technique Equipment name & NEMO ID Cleanliness Primary Materials Etched Other Materials Etched Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Notes Stylus Tip Radius
Reactive Ion Etching (RIE) MRC Reactive Ion Etcher
mrc 		Flexible
1

Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Reactive Ion Etching (RIE) Oxford Dielectric Etcher
oxford-rie 		Flexible
1

4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Reactive Ion Etching (RIE) Plasmaetch PE-50
plasma-etch 		Flexible
Multiple

Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment.
Plasma Mode Etching, Reactive Ion Etching (RIE), Downstream/Remote Plasma Resist Removal Samco PC300 Plasma Etch System
samco 		Flexible
Four 4" wafers or two 6" wafers and one 8" wafer
20 ºC