The process we call oxide growth is better decribed as the conversion of silicon on the surfase of a silicon wafer to silicon dioxide. Steam or oxygen is used to oxidize the surface silicon. This is done at high temperature (800 to 1100c) in an oxidation furnace.
| Processing Techniques | Equipment name & NEMO ID | Teaser Blurb | Cleanliness | Location |
|---|---|---|---|---|
| Oxide Growth (furnace) |
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide |
Flexible | SNF Paul G Allen L107 Cleanroom | |
| Oxide Growth (furnace), Annealing (furnace) |
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide |
Flexible | SNF Paul G Allen L107 Cleanroom | |
| Oxide Growth (furnace) |
Tystar Bank 2 Tube 5 B2T5 Clean Anneal |
Clean | SNF Paul G Allen L107 Cleanroom | |
| Oxide Growth (furnace) |
Tystar Bank 2 Tube 6 B2T6 Clean Oxide |
Clean Tube Furnace for Wet and Dry Oxidation. |
Clean | SNF Paul G Allen L107 Cleanroom |
| Oxide Growth (furnace) |
Tystar Bank 3 Tube 9 B3T9 Clean Oxide |
Clean | SNF Paul G Allen L107 Cleanroom |