8 in wafer

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Process Temperature Range	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Sheet Resistance Measurement Characterization > Hall measurement	"All"	100.00 μm - 1000.00 μm	-258 °C - 1000 °C	8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Other (ProMCom approval required) (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	"All"			8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Other (ProMCom approval required) (Various)	1 wafer(2" to 8")