Plasma activated direct bonding of silicon and lithium niobate thin films

Project Type:

E241

Date:

June 2021 (all day)

Areas of Interest:

bonding of pieces, metasurfaces, wave guides

Report:

Plasma activated direct bonding of silicon and lithium niobate thin films

Processing Technique (former Function and Method):

Bonding

Researchers and (Mentors):

Sahil Dagli, Baba Ogunlade (Usha Raghuram), (Swaroop Kommera), (Vijay Narasimhan)

List of Important Equipment:

Plasma Therm Versaline LL ICP Deep Silicon Etcher (PT-DSE)

Finetech Lambda (flipchipbonder)

Nano Nugget:

Bonding pieces of Si and LiNb with tweezers Video

Our E241 students demonstrate their technique for bonding pieces of Si and LiNb with tweezers.

Read more about Bonding pieces of Si and LiNb with tweezers Video

Measuring etch rates with the drop gauge

The drop gauge is a simple to use, tabletop vertical displacement measuring device in SNF. It has micron level resolution and can be used to characterize micron to millimeter scale etch rates.

Read more about Measuring etch rates with the drop gauge

Direct Bonding Chips with Tweezers

When bonding plasma activated surfaces together, it is important to apply a sufficient amount of force to the chips when pressing them together to properly initiate the bond. Pressing with tweezers is an easy and effective, as well as tricky way to do this. Check out the tips and tricks!

Read more about Direct Bonding Chips with Tweezers

Materials

Lithium Niobate

Silicon