High-k/SiO2 interface Charge Characterization for ALD tools

Project Type:

E241

Date:

March 2011 (all day)

Areas of Interest:

Charge density study for HfO2 and Al2o3

Report:

High-k/SiO2 Interface Charge Characterization for ALD Tools- Final Report

Processing Technique (former Function and Method):

Atomic Layer Deposition (ALD)

Researchers and (Mentors):

Hong-Yu Chen, Luckshitha, (J Provine)

List of Important Equipment:

Savannah ALD (savannah)